extremely low r AON2400 8v n-channel mosfet v ds i d (at v gs =4.5v) 8a r ds(on) (at v gs = 2.5v) < 11m w r ds(on) (at v gs = 1.8v) < 13m w r ds(on) (at v gs = 1.5v) < 16m w r ds(on) (at v gs = 1.2v) < 23m w symbol v ds parameter the AON2400 combines advanced trench mosfet technology with a low resistance package to provide ds(on) . this device is ideal for load switch and battery protection applications. v maximum units 8v drain-source voltage 8 absolute maximum ratings t a =25c unless otherwise noted g d s v ds v gs i dm t j , t stg symbol t 10s steady-state w t a =25c t a =70c 1.8 2.8 t a =100c 5 power dissipation a 32 pulsed drain current c p d 6 c thermal characteristics typ max -55 to 150 units junction and storage temperature range parameter maximum junction-to-ambient a c/w r q ja 37 66 c/w maximum junction-to-ambient a d 80 45 v a continuous drain current g i d t a =25c 8 gate-source voltage drain-source voltage 8 v general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 8 v v ds =8v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.46 v i d(on) 32 a 8.5 11 t j =125c 11 14 10 13 m w 11.5 16 m w 16 23 m w g fs 100 s v sd 0.53 1 v i s 4.5 a c iss 1645 pf c oss 470 pf c rss 320 pf r g 1.6 3.2 w q g 16 nc q gs 2 nc q gd 2.8 nc t 7 ns i s =1a,v gs =0v diode forward voltage v gs =0v, v ds =0v, f=1mhz gate drain charge input capacitance output capacitance total gate charge v gs =4.5v, v ds =4v, i d =8a gate source charge turn-on delaytime v gs =0v, v ds =4v, f=1mhz switching parameters m w reverse transfer capacitance gate resistance maximum body-diode continuous current dynamic parameters v gs =2.5v, i d =8a r ds(on) static drain-source on-resistance v gs =1.2v, i d =3a v ds =5v, i d =8a forward transconductance v gs =1.8v, i d =6a v gs =1.5v, i d =5a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions on state drain current i d =250 m a, v gs =0v m a v ds =v gs , i d =250 m a drain-source breakdown voltage i dss v ds =0v, v gs =5v zero gate voltage drain current gate-body leakage current v gs =4.5v, v ds =5v t d(on) 7 ns t r 25 ns t d(off) 37 ns t f 13 ns t rr 17 ns q rr 9 nc body diode reverse recovery charge i f =8a, di/dt=100a/ m s turn-off delaytime turn-on rise time turn-off fall time body diode reverse recovery time i f =8a, di/dt=100a/ m s turn-on delaytime v gs =4.5v, v ds =4v, r l =0.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON2400 8v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 5 10 15 0 0.3 0.6 0.9 1.2 1.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =8a v gs =1.8v i d =6a 25 c 125 c v ds =5v v gs =2.5v v gs =1.5v 0 5 10 15 20 25 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1v 1.2v 4.5v 2.5v 1.8v v gs =1.2v v gs =1.2v i d =3a v gs =1.8v v gs =1.5v i d =3a voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c AON2400 8v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 2 4 6 8 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =4v i d =8a 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction - to - t a =25 c operating area (note f) figure 11: single pulse power rating junction - to - ambient (note h) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note h) d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse r q ja =80 c/w AON2400 8v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d io d e r eco very t est c ircu it & w a vefo rm s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr AON2400 8v n-channel mosfet www.freescale.net.cn 5 / 5
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